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CP307-2N5308-WN, Central Semiconductor, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, POWER TRANSISTOR NPN DIE
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Product Specifications:
MfrPart.: CP307-2N5308-WNMfr: Central Semiconductor CorpDescription: POWER TRANSISTOR NPN DIEProduct Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - SinglePackage: BulkSeries: -PartStatus: ObsoleteTransistorType: NPN - DarlingtonCurrent-Collector(Ic)(Max): 300 mAVoltage-CollectorEmitterBreakdown(Max): 40 VVceSaturation(Max)@IbIc: 1.4V @ 200µA, 200mACurrent-CollectorCutoff(Max): 100nA (ICBO)DCCurrentGain(hFE)(Min)@IcVce: 20000 @ 100mA, 5VPower-Max: 625 mWFrequency-Transition: 60MHzOperatingTemperature: -65°C ~ 150°C (TJ)MountingType: Surface MountPackage/Case: DieCP307-2N5308-WN | Central Semiconductor | NHE Electronics
CP307-2N5308-WN were obtained directly from authorized Central Semiconductor distributors and other trusted sources throughout the world.