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    DMG4N60SK3-13, Diodes Incorporated, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 600V 3.7A TO252 T&R
    DMG4N60SK3-13 Images
    DMG4N60SK3-13 Images
    Product Attributes：
  • Part Number: DMG4N60SK3-13
  • Manufacturer: Diodes Incorporated
  • Description: MOSFET N-CH 600V 3.7A TO252 T&R
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • DMG4N60SK3-13 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: DMG4N60SK3-13
  • Mfr: Diodes Incorporated
  • Description: MOSFET N-CH 600V 3.7A TO252 T&R
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: -
  • PartStatus: Obsolete
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 600 V
  • Current-ContinuousDrain(Id)@25°C: 3.7A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 10V
  • RdsOn(Max)@IdVgs: 2.3Ohm @ 2A, 10V
  • Vgs(th)(Max)@Id: 4.5V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 14.3 nC @ 10 V
  • Vgs(Max): ±30V
  • InputCapacitance(Ciss)(Max)@Vds: 532 pF @ 25 V
  • FETFeature: -
  • PowerDissipation(Max): 48W (Ta)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: TO-252-3
  • DMG4N60SK3-13 | Diodes Incorporated | NHE Electronics
    • DMG4N60SK3-13 were obtained directly from authorized Diodes Incorporated distributors and other trusted sources throughout the world.
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