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DMN1032UCB4-7, Diodes Incorporated, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 12V 4.8A U-WLB1010-4
Product Attributes:
Part Number: DMN1032UCB4-7
Manufacturer: Diodes Incorporated
Description: MOSFET N-CH 12V 4.8A U-WLB1010-4
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
DMN1032UCB4-7 Datasheet (PDF)
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Product Specifications:
MfrPart.: DMN1032UCB4-7Mfr: Diodes IncorporatedDescription: MOSFET N-CH 12V 4.8A U-WLB1010-4Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: -PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 12 VCurrent-ContinuousDrain(Id)@25°C: 4.8A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 26mOhm @ 1A, 4.5VVgs(th)(Max)@Id: 1.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 4.5 nC @ 4.5 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 450 pF @ 6 VFETFeature: -PowerDissipation(Max): 900mW (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: U-WLB1010-4DMN1032UCB4-7 | Diodes Incorporated | NHE Electronics
DMN1032UCB4-7 were obtained directly from authorized Diodes Incorporated distributors and other trusted sources throughout the world.