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    DMN10H099SFG-13, Diodes Incorporated, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 4.2A PWRDI3333
    DMN10H099SFG-13 Images
    DMN10H099SFG-13 Images
    Product Attributes：
  • Part Number: DMN10H099SFG-13
  • Manufacturer: Diodes Incorporated
  • Description: MOSFET N-CH 100V 4.2A PWRDI3333
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • DMN10H099SFG-13 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: DMN10H099SFG-13
  • Mfr: Diodes Incorporated
  • Description: MOSFET N-CH 100V 4.2A PWRDI3333
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR)
  • Series: -
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 100 V
  • Current-ContinuousDrain(Id)@25°C: 4.2A (Ta)
  • DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10V
  • RdsOn(Max)@IdVgs: 80mOhm @ 3.3A, 10V
  • Vgs(th)(Max)@Id: 3V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 25.2 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 1172 pF @ 50 V
  • FETFeature: -
  • PowerDissipation(Max): 980mW (Ta)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PowerDI3333-8
  • DMN10H099SFG-13 | Diodes Incorporated | NHE Electronics
    • DMN10H099SFG-13 were obtained directly from authorized Diodes Incorporated distributors and other trusted sources throughout the world.
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