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    DMN2005UFGQ-7, Diodes Incorporated, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 20V 18A PWRDI3333
    DMN2005UFGQ-7 Images
    DMN2005UFGQ-7 Images
    Product Attributes：
  • Part Number: DMN2005UFGQ-7
  • Manufacturer: Diodes Incorporated
  • Description: MOSFET N-CH 20V 18A PWRDI3333
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • DMN2005UFGQ-7 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: DMN2005UFGQ-7
  • Mfr: Diodes Incorporated
  • Description: MOSFET N-CH 20V 18A PWRDI3333
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR)
  • Series: Automotive, AEC-Q101
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 20 V
  • Current-ContinuousDrain(Id)@25°C: 18A (Ta), 50A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 4.5V
  • RdsOn(Max)@IdVgs: 4.6mOhm @ 13.5A, 4.5V
  • Vgs(th)(Max)@Id: 1.2V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 164 nC @ 10 V
  • Vgs(Max): ±12V
  • InputCapacitance(Ciss)(Max)@Vds: 6495 pF @ 10 V
  • FETFeature: -
  • PowerDissipation(Max): 1.05W (Ta)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PowerDI3333-8
  • DMN2005UFGQ-7 | Diodes Incorporated | NHE Electronics
    • DMN2005UFGQ-7 were obtained directly from authorized Diodes Incorporated distributors and other trusted sources throughout the world.
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