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    DMN2014LHAB-7, Diodes Incorporated, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET 2N-CH 20V 9A 6-UDFN
    DMN2014LHAB-7 Images
    DMN2014LHAB-7 Images
    Product Attributes：
  • Part Number: DMN2014LHAB-7
  • Manufacturer: Diodes Incorporated
  • Description: MOSFET 2N-CH 20V 9A 6-UDFN
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • DMN2014LHAB-7 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: DMN2014LHAB-7
  • Mfr: Diodes Incorporated
  • Description: MOSFET 2N-CH 20V 9A 6-UDFN
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: -
  • PartStatus: Active
  • FETType: 2 N-Channel (Dual) Common Drain
  • FETFeature: Logic Level Gate
  • DraintoSourceVoltage(Vdss): 20V
  • Current-ContinuousDrain(Id)@25°C: 9A
  • RdsOn(Max)@IdVgs: 13mOhm @ 4A, 4.5V
  • Vgs(th)(Max)@Id: 1.1V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 16nC @ 4.5V
  • InputCapacitance(Ciss)(Max)@Vds: 1550pF @ 10V
  • Power-Max: 800mW
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: 6-UFDFN Exposed Pad
  • DMN2014LHAB-7 | Diodes Incorporated | NHE Electronics
    • DMN2014LHAB-7 were obtained directly from authorized Diodes Incorporated distributors and other trusted sources throughout the world.
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