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    DMN2016UTS-13, Diodes Incorporated, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET 2N-CH 20V 8.58A 8-TSSOP
    DMN2016UTS-13 Images
    DMN2016UTS-13 Images
    Product Attributes：
  • Part Number: DMN2016UTS-13
  • Manufacturer: Diodes Incorporated
  • Description: MOSFET 2N-CH 20V 8.58A 8-TSSOP
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • DMN2016UTS-13 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: DMN2016UTS-13
  • Mfr: Diodes Incorporated
  • Description: MOSFET 2N-CH 20V 8.58A 8-TSSOP
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: -
  • PartStatus: Active
  • FETType: 2 N-Channel (Dual) Common Drain
  • FETFeature: Logic Level Gate
  • DraintoSourceVoltage(Vdss): 20V
  • Current-ContinuousDrain(Id)@25°C: 8.58A
  • RdsOn(Max)@IdVgs: 14.5mOhm @ 9.4A, 4.5V
  • Vgs(th)(Max)@Id: 1V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 16.5nC @ 4.5V
  • InputCapacitance(Ciss)(Max)@Vds: 1495pF @ 10V
  • Power-Max: 880mW
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: 8-TSSOP (0.173, 4.40mm Width)
  • DMN2016UTS-13 | Diodes Incorporated | NHE Electronics
    • DMN2016UTS-13 were obtained directly from authorized Diodes Incorporated distributors and other trusted sources throughout the world.
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