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    DMN3018SFGQ-13, Diodes Incorporated, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 8.5A PWRDI3333-8
    DMN3018SFGQ-13 Images
    DMN3018SFGQ-13 Images
    Product Attributes：
  • Part Number: DMN3018SFGQ-13
  • Manufacturer: Diodes Incorporated
  • Description: MOSFET N-CH 30V 8.5A PWRDI3333-8
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • DMN3018SFGQ-13 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: DMN3018SFGQ-13
  • Mfr: Diodes Incorporated
  • Description: MOSFET N-CH 30V 8.5A PWRDI3333-8
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR)
  • Series: Automotive, AEC-Q101
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 30 V
  • Current-ContinuousDrain(Id)@25°C: 8.5A (Ta)
  • DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
  • RdsOn(Max)@IdVgs: 21mOhm @ 10A, 10V
  • Vgs(th)(Max)@Id: 2.1V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 13.2 nC @ 10 V
  • Vgs(Max): ±25V
  • InputCapacitance(Ciss)(Max)@Vds: 697 pF @ 15 V
  • FETFeature: -
  • PowerDissipation(Max): 1W (Ta)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PowerDI3333-8
  • DMN3018SFGQ-13 | Diodes Incorporated | NHE Electronics
    • DMN3018SFGQ-13 were obtained directly from authorized Diodes Incorporated distributors and other trusted sources throughout the world.
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