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    DMP2006UFGQ-13, Diodes Incorporated, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V PWRDI3333
    DMP2006UFGQ-13 Images
    DMP2006UFGQ-13 Images
    Product Attributes：
  • Part Number: DMP2006UFGQ-13
  • Manufacturer: Diodes Incorporated
  • Description: MOSFET P-CH 20V PWRDI3333
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • DMP2006UFGQ-13 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: DMP2006UFGQ-13
  • Mfr: Diodes Incorporated
  • Description: MOSFET P-CH 20V PWRDI3333
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR)
  • Series: Automotive, AEC-Q101
  • PartStatus: Active
  • FETType: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 20 V
  • Current-ContinuousDrain(Id)@25°C: 17.5A (Ta), 40A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 1.5V, 4.5V
  • RdsOn(Max)@IdVgs: 5.5mOhm @ 15A, 4.5V
  • Vgs(th)(Max)@Id: 1V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 200 nC @ 10 V
  • Vgs(Max): ±10V
  • InputCapacitance(Ciss)(Max)@Vds: 7500 pF @ 10 V
  • FETFeature: -
  • PowerDissipation(Max): 2.3W (Ta), 41W (Tc)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PowerDI3333-8
  • DMP2006UFGQ-13 | Diodes Incorporated | NHE Electronics
    • DMP2006UFGQ-13 were obtained directly from authorized Diodes Incorporated distributors and other trusted sources throughout the world.
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