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DMT10H015LSS-13, Diodes Incorporated, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 8.3A 8SO
BRIDGE RECT 1P 400V 1A T-MINIDIP
IC REG LIN 3.3V 150MA X2WLB0606
MOSFET P-CH 30V 60A PWRDI5060-8
MOSFET P-CH 20V 1.5A SOT-323
DIODE ARRAY SCHOTTKY 100V TO252
Product Specifications：
MfrPart.: DMT10H015LSS-13Mfr: Diodes IncorporatedDescription: MOSFET N-CH 100V 8.3A 8SOProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: -PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 8.3A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 16mOhm @ 20A, 10VVgs(th)(Max)@Id: 3.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 33.3 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1871 pF @ 50 VFETFeature: -PowerDissipation(Max): 1.2W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SODMT10H015LSS-13 | Diodes Incorporated | NHE Electronics
DMT10H015LSS-13 were obtained directly from authorized Diodes Incorporated distributors and other trusted sources throughout the world.
