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    HBDM60V600W-7, Diodes Incorporated, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, TRANS NPN/PNP 65V/60V SOT363
    HBDM60V600W-7 Images
    HBDM60V600W-7 Images
    Product Attributes：
  • Part Number: HBDM60V600W-7
  • Manufacturer: Diodes Incorporated
  • Description: TRANS NPN/PNP 65V/60V SOT363
  • Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays
  • HBDM60V600W-7 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: HBDM60V600W-7
  • Mfr: Diodes Incorporated
  • Description: TRANS NPN/PNP 65V/60V SOT363
  • Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: -
  • PartStatus: Active
  • TransistorType: NPN, PNP
  • Current-Collector(Ic)(Max): 500mA, 600mA
  • Voltage-CollectorEmitterBreakdown(Max): 65V, 60V
  • VceSaturation(Max)@IbIc: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
  • Current-CollectorCutoff(Max): 100nA
  • DCCurrentGain(hFE)(Min)@IcVce: 100 @ 100mA, 1V / 100 @ 150mA, 10V
  • Power-Max: 200mW
  • Frequency-Transition: 100MHz
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: 6-TSSOP, SC-88, SOT-363
  • HBDM60V600W-7 | Diodes Incorporated | NHE Electronics
    • HBDM60V600W-7 were obtained directly from authorized Diodes Incorporated distributors and other trusted sources throughout the world.
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