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UMG4N-7, Diodes Incorporated, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, Pre-Biased, TRANS 2NPN PREBIAS 0.15W SOT353
Product Attributes：
Part Number: UMG4N-7
Manufacturer: Diodes Incorporated
Description: TRANS 2NPN PREBIAS 0.15W SOT353
Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, Pre-Biased
UMG4N-7 Datasheet (PDF)
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Product Specifications：
MfrPart.: UMG4N-7Mfr: Diodes IncorporatedDescription: TRANS 2NPN PREBIAS 0.15W SOT353Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, Pre-BiasedPackage: Tape & Reel (TR)Series: -PartStatus: ActiveTransistorType: 2 NPN - Pre-Biased (Dual)Current-Collector(Ic)(Max): 100mAVoltage-CollectorEmitterBreakdown(Max): 50VResistor-Base(R1): 10kOhmsResistor-EmitterBase(R2): -DCCurrentGain(hFE)(Min)@IcVce: 100 @ 1mA, 5VVceSaturation(Max)@IbIc: 300mV @ 1mA, 10mACurrent-CollectorCutoff(Max): -Frequency-Transition: 250MHzPower-Max: 150mWMountingType: Surface MountPackage/Case: 5-TSSOP, SC-70-5, SOT-353UMG4N-7 | Diodes Incorporated | NHE Electronics
UMG4N-7 were obtained directly from authorized Diodes Incorporated distributors and other trusted sources throughout the world.
