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G2R1000MT17D, GeneSiC Semiconductor, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, SIC MOSFET N-CH 4A TO247-3
BRIDGE RECT 1PHASE 800V 6A KBU
DIODE SCHOTTKY 40V 150A TO244AB
DIODE SILICON 1.2KV 1A TO252
DIODE SCHOTTKY 20V 250A TO244AB
DIODE MODULE 600V 400A 2TOWER
DIODE GEN PURP REV 50V 50A DO5
Product Specifications：
MfrPart.: G2R1000MT17DMfr: GeneSiC SemiconductorDescription: SIC MOSFET N-CH 4A TO247-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: G2R™PartStatus: ActiveFETType: N-ChannelTechnology: SiCFET (Silicon Carbide)DraintoSourceVoltage(Vdss): 1700 VCurrent-ContinuousDrain(Id)@25°C: 4A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 20VRdsOn(Max)@IdVgs: 1.2Ohm @ 2A, 20VVgs(th)(Max)@Id: 4V @ 2mAGateCharge(Qg)(Max)@Vgs: -Vgs(Max): +20V, -5VInputCapacitance(Ciss)(Max)@Vds: 139 pF @ 1000 VFETFeature: -PowerDissipation(Max): 53W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Through HoleSupplierDevicePackage: TO-247-3G2R1000MT17D | GeneSiC Semiconductor | NHE Electronics
G2R1000MT17D were obtained directly from authorized GeneSiC Semiconductor distributors and other trusted sources throughout the world.
