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G2R1000MT33J, GeneSiC Semiconductor, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, SIC MOSFET N-CH 4A TO263-7
DIODE GEN PURP 800V 16A DO203AA
DIODE SCHOTTKY 40V 300A TO244AB
DIODE SCHOTTKY 45V 300A D67
1700V 5A TO-263-7 SIC SCHOTTKY M
DIODE SCHOTTKY 150V 250A 3 TOWER
DIODE GEN PURP 200V 100A 3 TOWER
Product Specifications:
MfrPart.: G2R1000MT33JMfr: GeneSiC SemiconductorDescription: SIC MOSFET N-CH 4A TO263-7Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: G2R™PartStatus: ActiveFETType: N-ChannelTechnology: SiCFET (Silicon Carbide)DraintoSourceVoltage(Vdss): 3300 VCurrent-ContinuousDrain(Id)@25°C: 4A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 20VRdsOn(Max)@IdVgs: 1.2Ohm @ 2A, 20VVgs(th)(Max)@Id: 3.5V @ 2mAGateCharge(Qg)(Max)@Vgs: 21 nC @ 20 VVgs(Max): +20V, -5VInputCapacitance(Ciss)(Max)@Vds: 238 pF @ 1000 VFETFeature: -PowerDissipation(Max): 74W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: TO-263-7G2R1000MT33J | GeneSiC Semiconductor | NHE Electronics
G2R1000MT33J were obtained directly from authorized GeneSiC Semiconductor distributors and other trusted sources throughout the world.