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GA10JT12-263, GeneSiC Semiconductor, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, TRANS SJT 1200V 25A
DIODE GEN PURP REV 200V 40A DO5
DIODE GEN PURP 400V 200A 3 TOWER
BRIDGE RECT 1PHASE 1KV 4A KBL
DIODE SCHOTTKY 40V 300A D67
DIODE SCHOTTKY 200V 400A 3TOWER
DIODE GEN PURP 400V 85A DO5
Product Specifications:
MfrPart.: GA10JT12-263Mfr: GeneSiC SemiconductorDescription: TRANS SJT 1200V 25AProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: -PartStatus: ActiveFETType: -Technology: SiC (Silicon Carbide Junction Transistor)DraintoSourceVoltage(Vdss): 1200 VCurrent-ContinuousDrain(Id)@25°C: 25A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): -RdsOn(Max)@IdVgs: 120mOhm @ 10AVgs(th)(Max)@Id: -GateCharge(Qg)(Max)@Vgs: -Vgs(Max): -InputCapacitance(Ciss)(Max)@Vds: 1403 pF @ 800 VFETFeature: -PowerDissipation(Max): 170W (Tc)OperatingTemperature: 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: -GA10JT12-263 | GeneSiC Semiconductor | NHE Electronics
GA10JT12-263 were obtained directly from authorized GeneSiC Semiconductor distributors and other trusted sources throughout the world.