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    • A Fast Developed Electronic Components Distributor
    GA10SICP12-263, GeneSiC Semiconductor, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, TRANS SJT 1200V 25A D2PAK
    GA10SICP12-263 Images
    GA10SICP12-263 Images
    Product Attributes：
  • Part Number: GA10SICP12-263
  • Manufacturer: GeneSiC Semiconductor
  • Description: TRANS SJT 1200V 25A D2PAK
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • GA10SICP12-263 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: GA10SICP12-263
  • Mfr: GeneSiC Semiconductor
  • Description: TRANS SJT 1200V 25A D2PAK
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tube
  • Series: -
  • PartStatus: Active
  • FETType: -
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • DraintoSourceVoltage(Vdss): 1200 V
  • Current-ContinuousDrain(Id)@25°C: 25A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): -
  • RdsOn(Max)@IdVgs: 100mOhm @ 10A
  • Vgs(th)(Max)@Id: -
  • GateCharge(Qg)(Max)@Vgs: -
  • Vgs(Max): -
  • InputCapacitance(Ciss)(Max)@Vds: 1403 pF @ 800 V
  • FETFeature: -
  • PowerDissipation(Max): 170W (Tc)
  • OperatingTemperature: 175°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: TO-263-7
  • GA10SICP12-263 | GeneSiC Semiconductor | NHE Electronics
    • GA10SICP12-263 were obtained directly from authorized GeneSiC Semiconductor distributors and other trusted sources throughout the world.
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