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GA20JT12-263, GeneSiC Semiconductor, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, TRANS SJT 1200V 45A D2PAK
SIC MOSFET N-CH 4A TO247-3
BRIDGE RECT 1PHASE 100V 4A KBJ
BRIDGE RECT 1PHASE 200V 8A GBU
DIODE GEN PURP REV 200V 40A DO5
DIODE MODULE 1.2KV 250A 3TOWER
BRIDGE RECT 1PHASE 1KV 4A KBJ
Product Specifications:
MfrPart.: GA20JT12-263Mfr: GeneSiC SemiconductorDescription: TRANS SJT 1200V 45A D2PAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: -PartStatus: ActiveFETType: -Technology: SiC (Silicon Carbide Junction Transistor)DraintoSourceVoltage(Vdss): 1200 VCurrent-ContinuousDrain(Id)@25°C: 45A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): -RdsOn(Max)@IdVgs: 60mOhm @ 20AVgs(th)(Max)@Id: -GateCharge(Qg)(Max)@Vgs: -Vgs(Max): -InputCapacitance(Ciss)(Max)@Vds: 3091 pF @ 800 VFETFeature: -PowerDissipation(Max): 282W (Tc)OperatingTemperature: 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: TO-263-7GA20JT12-263 | GeneSiC Semiconductor | NHE Electronics
GA20JT12-263 were obtained directly from authorized GeneSiC Semiconductor distributors and other trusted sources throughout the world.