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GA35XCP12-247, GeneSiC Semiconductor, Discrete Semiconductor Products~Transistors - IGBTs - Single, IGBT 1200V SOT247
TRANS SJT 1200V 15A D2PAK
DIODE GEN PURP 200V 85A DO5
DIODE GEN PURP REV 1.2KV 70A DO5
DIODE MODULE 35V 200A 3TOWER
DIODE GEN PURP REV 400V 50A DO5
DIODE GEN PURP 600V 15A DO5
Product Specifications:
MfrPart.: GA35XCP12-247Mfr: GeneSiC SemiconductorDescription: IGBT 1200V SOT247Product Category: Discrete Semiconductor Products~Transistors - IGBTs - SinglePackage: TubeSeries: -PartStatus: ObsoleteIGBTType: PTVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): -Current-CollectorPulsed(Icm): 35 AVce(on)(Max)@VgeIc: 3V @ 15V, 35APower-Max: -SwitchingEnergy: 2.66mJ (on), 4.35mJ (off)InputType: StandardGateCharge: 50 nCTd(on/off)@25°C: -TestCondition: 800V, 35A, 22Ohm, 15VReverseRecoveryTime(trr): 36 nsOperatingTemperature: -40°C ~ 150°C (TJ)MountingType: Through HolePackage/Case: TO-247-3GA35XCP12-247 | GeneSiC Semiconductor | NHE Electronics
GA35XCP12-247 were obtained directly from authorized GeneSiC Semiconductor distributors and other trusted sources throughout the world.