Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
MIEB101W1200EH, IXYS, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MODULE 1200V 183A 630W E3
Product Attributes：
Part Number: MIEB101W1200EH
Manufacturer: IXYS ( Now IXYS is part of Littelfuse )
Description: IGBT MODULE 1200V 183A 630W E3
Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules
MIEB101W1200EH Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
IXYS, you may also be interested in the following:
MOD THYRISTOR SGL 2000V Y1-CU
MOSFET P-CH 150V 15A TO252
IGBT MOD 600V 69A 208W ECO-PAC2
MOSFET N-CH 150V 160A TO247AD
IGBT MODULE 600V 75A 250W TO204
SSR RELAY SPST-NO 150MA 0-400V
Product Specifications：
MfrPart.: MIEB101W1200EHMfr: IXYSDescription: IGBT MODULE 1200V 183A 630W E3Product Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: BoxSeries: -PartStatus: ActiveIGBTType: -Configuration: Three Phase InverterVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 183 APower-Max: 630 WVce(on)(Max)@VgeIc: 2.2V @ 15V, 100ACurrent-CollectorCutoff(Max): 300 µAInputCapacitance(Cies)@Vce: 7.43 nF @ 25 VInput: StandardNTCThermistor: NoOperatingTemperature: -40°C ~ 125°C (TJ)MountingType: Chassis MountPackage/Case: E3MIEB101W1200EH | IXYS | NHE Electronics
MIEB101W1200EH were obtained directly from authorized IXYS distributors and other trusted sources throughout the world.
