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BFP182WE6327, Infineon, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF, RF TRANSISTOR, L BAND, NPN
Product Attributes:
Part Number: BFP182WE6327
Manufacturer: Infineon
Description: RF TRANSISTOR, L BAND, NPN
Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
BFP182WE6327 Datasheet (PDF)
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Product Specifications:
MfrPart.: BFP182WE6327Mfr: Infineon TechnologiesDescription: RF TRANSISTOR, L BAND, NPNProduct Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RFPackage: BulkSeries: -PartStatus: ActiveTransistorType: NPNVoltage-CollectorEmitterBreakdown(Max): 12VFrequency-Transition: 8GHzNoiseFigure(dBTyp@f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHzGain: 22dBPower-Max: 250mWDCCurrentGain(hFE)(Min)@IcVce: 70 @ 10mA, 8VCurrent-Collector(Ic)(Max): 35mAOperatingTemperature: 150°C (TJ)MountingType: Surface MountPackage/Case: SC-82A, SOT-343BFP182WE6327 | Infineon | NHE Electronics
BFP182WE6327 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.