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BFP182WE6327, Infineon, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF, RF TRANSISTOR, L BAND, NPN
BFP182WE6327 Images
BFP182WE6327 Images
Product Attributes:
  • Part Number: BFP182WE6327
  • Manufacturer: Infineon
  • Description: RF TRANSISTOR, L BAND, NPN
  • Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
  • BFP182WE6327 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: BFP182WE6327
  • Mfr: Infineon Technologies
  • Description: RF TRANSISTOR, L BAND, NPN
  • Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
  • Package: Bulk
  • Series: -
  • PartStatus: Active
  • TransistorType: NPN
  • Voltage-CollectorEmitterBreakdown(Max): 12V
  • Frequency-Transition: 8GHz
  • NoiseFigure(dBTyp@f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
  • Gain: 22dB
  • Power-Max: 250mW
  • DCCurrentGain(hFE)(Min)@IcVce: 70 @ 10mA, 8V
  • Current-Collector(Ic)(Max): 35mA
  • OperatingTemperature: 150°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: SC-82A, SOT-343
  • BFP182WE6327 | Infineon | NHE Electronics
  • BFP182WE6327 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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