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BSB008NE2LXXUMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 25V 46A/180A 2WDSON
BSB008NE2LXXUMA1 Images
BSB008NE2LXXUMA1 Images
Product Attributes:
  • Part Number: BSB008NE2LXXUMA1
  • Manufacturer: Infineon
  • Description: MOSFET N-CH 25V 46A/180A 2WDSON
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • BSB008NE2LXXUMA1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: BSB008NE2LXXUMA1
  • Mfr: Infineon Technologies
  • Description: MOSFET N-CH 25V 46A/180A 2WDSON
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: OptiMOS™
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 25 V
  • Current-ContinuousDrain(Id)@25°C: 46A (Ta), 180A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
  • RdsOn(Max)@IdVgs: 0.8mOhm @ 30A, 10V
  • Vgs(th)(Max)@Id: 2V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 343 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 16000 pF @ 12 V
  • FETFeature: -
  • PowerDissipation(Max): 2.8W (Ta), 89W (Tc)
  • OperatingTemperature: -40°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: MG-WDSON-2, CanPAK M™
  • BSB008NE2LXXUMA1 | Infineon | NHE Electronics
  • BSB008NE2LXXUMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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