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BSB017N03LX3 G, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 32A/147A 2WDSON
BSB017N03LX3 G Images
BSB017N03LX3 G Images
Product Attributes:
  • Part Number: BSB017N03LX3 G
  • Manufacturer: Infineon
  • Description: MOSFET N-CH 30V 32A/147A 2WDSON
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • BSB017N03LX3 G Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: BSB017N03LX3 G
  • Mfr: Infineon Technologies
  • Description: MOSFET N-CH 30V 32A/147A 2WDSON
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: OptiMOS™
  • PartStatus: Obsolete
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 30 V
  • Current-ContinuousDrain(Id)@25°C: 32A (Ta), 147A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
  • RdsOn(Max)@IdVgs: 1.7mOhm @ 30A, 10V
  • Vgs(th)(Max)@Id: 2.2V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 102 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 7800 pF @ 15 V
  • FETFeature: -
  • PowerDissipation(Max): 2.8W (Ta), 57W (Tc)
  • OperatingTemperature: -40°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: MG-WDSON-2, CanPAK M™
  • BSB017N03LX3 G | Infineon | NHE Electronics
  • BSB017N03LX3 G were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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