Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
BSB028N06NN3GXUMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 22A/90A 2WDSON
BSB028N06NN3GXUMA1 Images
Product Attributes：
Part Number: BSB028N06NN3GXUMA1
Manufacturer: Infineon
Description: MOSFET N-CH 60V 22A/90A 2WDSON
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BSB028N06NN3GXUMA1 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Infineon, you may also be interested in the following:
MOSFET N-CH 100V 170MA SOT23-3
IC FET RF LDMOS 60W H-36265-2
IC SRAM 36MBIT PARALLEL 165FBGA
IC GATE DRVR LOW-SIDE 20SSOP
Product Specifications：
MfrPart.: BSB028N06NN3GXUMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 60V 22A/90A 2WDSONProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 22A (Ta), 90A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 2.8mOhm @ 30A, 10VVgs(th)(Max)@Id: 4V @ 102µAGateCharge(Qg)(Max)@Vgs: 143 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 12000 pF @ 30 VFETFeature: -PowerDissipation(Max): 2.2W (Ta), 78W (Tc)OperatingTemperature: -40°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: MG-WDSON-2, CanPAK M™BSB028N06NN3GXUMA1 | Infineon | NHE Electronics
BSB028N06NN3GXUMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
