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BSB104N08NP3GXUSA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 80V 13A/50A 2WDSON
BSB104N08NP3GXUSA1 Images
Product Attributes：
Part Number: BSB104N08NP3GXUSA1
Manufacturer: Infineon
Description: MOSFET N-CH 80V 13A/50A 2WDSON
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BSB104N08NP3GXUSA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: BSB104N08NP3GXUSA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 80V 13A/50A 2WDSONProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 80 VCurrent-ContinuousDrain(Id)@25°C: 13A (Ta), 50A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 10.4mOhm @ 10A, 10VVgs(th)(Max)@Id: 3.5V @ 40µAGateCharge(Qg)(Max)@Vgs: 31 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2100 pF @ 40 VFETFeature: -PowerDissipation(Max): 2.8W (Ta), 42W (Tc)OperatingTemperature: -40°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: MG-WDSON-2, CanPAK M™BSB104N08NP3GXUSA1 | Infineon | NHE Electronics
BSB104N08NP3GXUSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
