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BSC018NE2LSIATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 25V 29A/100A TDSON
Product Attributes：
Part Number: BSC018NE2LSIATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 25V 29A/100A TDSON
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BSC018NE2LSIATMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: BSC018NE2LSIATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 25V 29A/100A TDSONProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 25 VCurrent-ContinuousDrain(Id)@25°C: 29A (Ta), 100A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 1.8mOhm @ 30A, 10VVgs(th)(Max)@Id: 2V @ 250µAGateCharge(Qg)(Max)@Vgs: 36 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2500 pF @ 12 VFETFeature: -PowerDissipation(Max): 2.5W (Ta), 69W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TDSON-8-6BSC018NE2LSIATMA1 | Infineon | NHE Electronics
BSC018NE2LSIATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
