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BSC082N10LSGATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 13.8A 8TDSON
Product Attributes：
Part Number: BSC082N10LSGATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 100V 13.8A 8TDSON
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BSC082N10LSGATMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: BSC082N10LSGATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 100V 13.8A 8TDSONProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™PartStatus: Not For New DesignsFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 13.8A (Ta), 100A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 8.2mOhm @ 100A, 10VVgs(th)(Max)@Id: 2.4V @ 110µAGateCharge(Qg)(Max)@Vgs: 104 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 7400 pF @ 50 VFETFeature: -PowerDissipation(Max): 156W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TDSON-8-1BSC082N10LSGATMA1 | Infineon | NHE Electronics
BSC082N10LSGATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
