Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
BSC123N08NS3GATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 80V 11A/55A TDSON
BSC123N08NS3GATMA1 Images
Product Attributes:
Part Number: BSC123N08NS3GATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 80V 11A/55A TDSON
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BSC123N08NS3GATMA1 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Infineon, you may also be interested in the following:
IC CLK BUFF 18OUT 200MHZ 100LBGA
IC FLASH 128MBIT PARALLEL 64FBGA
RF TRANS NPN 9V 14GHZ TSFP-3
TRANS 2NPN PREBIAS 0.25W SOT363
IC SRAM 64MBIT PARALLEL 48FBGA
IC MCU 16BIT 64KB MROM 100QFP
Product Specifications:
MfrPart.: BSC123N08NS3GATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 80V 11A/55A TDSONProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 80 VCurrent-ContinuousDrain(Id)@25°C: 11A (Ta), 55A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 12.3mOhm @ 33A, 10VVgs(th)(Max)@Id: 3.5V @ 33µAGateCharge(Qg)(Max)@Vgs: 25 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1870 pF @ 40 VFETFeature: -PowerDissipation(Max): 2.5W (Ta), 66W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TDSON-8-1BSC123N08NS3GATMA1 | Infineon | NHE Electronics
BSC123N08NS3GATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.