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BSC196N10NSGATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 8.5A/45A TDSON
Product Attributes：
Part Number: BSC196N10NSGATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 100V 8.5A/45A TDSON
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BSC196N10NSGATMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: BSC196N10NSGATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 100V 8.5A/45A TDSONProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 8.5A (Ta), 45A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 19.6mOhm @ 45A, 10VVgs(th)(Max)@Id: 4V @ 42µAGateCharge(Qg)(Max)@Vgs: 34 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2300 pF @ 50 VFETFeature: -PowerDissipation(Max): 78W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TDSON-8-1BSC196N10NSGATMA1 | Infineon | NHE Electronics
BSC196N10NSGATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
