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BSC200P03LSGAUMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 9.9/12.5A 8TDSON
Product Attributes:
Part Number: BSC200P03LSGAUMA1
Manufacturer: Infineon
Description: MOSFET P-CH 30V 9.9/12.5A 8TDSON
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BSC200P03LSGAUMA1 Datasheet (PDF)
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Product Specifications:
MfrPart.: BSC200P03LSGAUMA1Mfr: Infineon TechnologiesDescription: MOSFET P-CH 30V 9.9/12.5A 8TDSONProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™PartStatus: ObsoleteFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 9.9A (Ta), 12.5A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 20mOhm @ 12.5A, 10VVgs(th)(Max)@Id: 2.2V @ 100µAGateCharge(Qg)(Max)@Vgs: 48.5 nC @ 10 VVgs(Max): ±25VInputCapacitance(Ciss)(Max)@Vds: 2430 pF @ 15 VFETFeature: -PowerDissipation(Max): 2.5W (Ta), 63W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TDSON-8-1BSC200P03LSGAUMA1 | Infineon | NHE Electronics
BSC200P03LSGAUMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.