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BSC200P03LSGAUMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 9.9/12.5A 8TDSON
BSC200P03LSGAUMA1 Images
BSC200P03LSGAUMA1 Images
Product Attributes:
  • Part Number: BSC200P03LSGAUMA1
  • Manufacturer: Infineon
  • Description: MOSFET P-CH 30V 9.9/12.5A 8TDSON
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • BSC200P03LSGAUMA1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: BSC200P03LSGAUMA1
  • Mfr: Infineon Technologies
  • Description: MOSFET P-CH 30V 9.9/12.5A 8TDSON
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: OptiMOS™
  • PartStatus: Obsolete
  • FETType: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 30 V
  • Current-ContinuousDrain(Id)@25°C: 9.9A (Ta), 12.5A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 10V
  • RdsOn(Max)@IdVgs: 20mOhm @ 12.5A, 10V
  • Vgs(th)(Max)@Id: 2.2V @ 100µA
  • GateCharge(Qg)(Max)@Vgs: 48.5 nC @ 10 V
  • Vgs(Max): ±25V
  • InputCapacitance(Ciss)(Max)@Vds: 2430 pF @ 15 V
  • FETFeature: -
  • PowerDissipation(Max): 2.5W (Ta), 63W (Tc)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PG-TDSON-8-1
  • BSC200P03LSGAUMA1 | Infineon | NHE Electronics
  • BSC200P03LSGAUMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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