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    BSG0810NDIATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET 2N-CH 25V 19A/39A 8TISON
    BSG0810NDIATMA1 Images
    BSG0810NDIATMA1 Images
    Product Attributes：
  • Part Number: BSG0810NDIATMA1
  • Manufacturer: Infineon
  • Description: MOSFET 2N-CH 25V 19A/39A 8TISON
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • BSG0810NDIATMA1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: BSG0810NDIATMA1
  • Mfr: Infineon Technologies
  • Description: MOSFET 2N-CH 25V 19A/39A 8TISON
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: OptiMOS™
  • PartStatus: Active
  • FETType: 2 N-Channel (Dual) Asymmetrical
  • FETFeature: Logic Level Gate, 4.5V Drive
  • DraintoSourceVoltage(Vdss): 25V
  • Current-ContinuousDrain(Id)@25°C: 19A, 39A
  • RdsOn(Max)@IdVgs: 3mOhm @ 20A, 10V
  • Vgs(th)(Max)@Id: 2V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 8.4nC @ 4.5V
  • InputCapacitance(Ciss)(Max)@Vds: 1040pF @ 12V
  • Power-Max: 2.5W
  • OperatingTemperature: -55°C ~ 155°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: 8-PowerTDFN
  • BSG0810NDIATMA1 | Infineon | NHE Electronics
    • BSG0810NDIATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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