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BSM100GB120DN2HOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MOD 1200V 150A 800W
BSM100GB120DN2HOSA1 Images
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Product Specifications:
MfrPart.: BSM100GB120DN2HOSA1Mfr: Infineon TechnologiesDescription: IGBT MOD 1200V 150A 800WProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: TraySeries: -PartStatus: Not For New DesignsIGBTType: -Configuration: Half BridgeVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 150 APower-Max: 800 WVce(on)(Max)@VgeIc: 3V @ 15V, 100ACurrent-CollectorCutoff(Max): 2 mAInputCapacitance(Cies)@Vce: 6.5 nF @ 25 VInput: StandardNTCThermistor: NoOperatingTemperature: 150°C (TJ)MountingType: Chassis MountPackage/Case: ModuleBSM100GB120DN2HOSA1 | Infineon | NHE Electronics
BSM100GB120DN2HOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.