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BSM150GB170DN2HOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MODULE
BSM150GB170DN2HOSA1 Images
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Product Specifications:
MfrPart.: BSM150GB170DN2HOSA1Mfr: Infineon TechnologiesDescription: IGBT MODULEProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: BulkSeries: -PartStatus: ActiveIGBTType: -Configuration: Half BridgeVoltage-CollectorEmitterBreakdown(Max): 1.7 VCurrent-Collector(Ic)(Max): 220 APower-Max: 1.25 WVce(on)(Max)@VgeIc: 3.9V @ 15V, 150ACurrent-CollectorCutoff(Max): 1.5 mAInputCapacitance(Cies)@Vce: 20 nF @ 25 VInput: StandardNTCThermistor: NoOperatingTemperature: 150°C (TJ)MountingType: Chassis MountPackage/Case: ModuleBSM150GB170DN2HOSA1 | Infineon | NHE Electronics
BSM150GB170DN2HOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.