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BSM200GB120DN2HOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MOD 1200V 290A 1400W
BSM200GB120DN2HOSA1 Images
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Product Specifications:
MfrPart.: BSM200GB120DN2HOSA1Mfr: Infineon TechnologiesDescription: IGBT MOD 1200V 290A 1400WProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: TraySeries: -PartStatus: Not For New DesignsIGBTType: -Configuration: Half BridgeVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 290 APower-Max: 1400 WVce(on)(Max)@VgeIc: 3V @ 15V, 200ACurrent-CollectorCutoff(Max): 4 mAInputCapacitance(Cies)@Vce: 13 nF @ 25 VInput: StandardNTCThermistor: NoOperatingTemperature: 150°C (TJ)MountingType: Chassis MountPackage/Case: ModuleBSM200GB120DN2HOSA1 | Infineon | NHE Electronics
BSM200GB120DN2HOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.