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BSM25GP120B2BOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MODULE 1200V
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Product Specifications:
MfrPart.: BSM25GP120B2BOSA1Mfr: Infineon TechnologiesDescription: IGBT MODULE 1200VProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: TraySeries: -PartStatus: Last Time BuyIGBTType: -Configuration: Full BridgeVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 45 APower-Max: 230 WVce(on)(Max)@VgeIc: 2.55V @ 15V, 25ACurrent-CollectorCutoff(Max): 500 µAInputCapacitance(Cies)@Vce: 1.5 nF @ 25 VInput: Three Phase Bridge RectifierNTCThermistor: YesOperatingTemperature: 150°C (TJ)MountingType: Chassis MountPackage/Case: ModuleBSM25GP120B2BOSA1 | Infineon | NHE Electronics
BSM25GP120B2BOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.