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BSM50GB170DN2HOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, BSM50GB170 - IGBT MODULE
BSM50GB170DN2HOSA1 Images
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Product Specifications:
MfrPart.: BSM50GB170DN2HOSA1Mfr: Infineon TechnologiesDescription: BSM50GB170 - IGBT MODULEProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: BulkSeries: -PartStatus: ObsoleteIGBTType: -Configuration: Half BridgeVoltage-CollectorEmitterBreakdown(Max): 1.7 VCurrent-Collector(Ic)(Max): 72 APower-Max: 500 WVce(on)(Max)@VgeIc: 3.9V @ 15V, 50ACurrent-CollectorCutoff(Max): -InputCapacitance(Cies)@Vce: 8 nF @ 25 VInput: StandardNTCThermistor: NoOperatingTemperature: 150°C (TJ)MountingType: Chassis MountPackage/Case: ModuleBSM50GB170DN2HOSA1 | Infineon | NHE Electronics
BSM50GB170DN2HOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.