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BSP295E6327T, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 1.8A SOT223-4
BSP295E6327T Images
BSP295E6327T Images
Product Attributes:
  • Part Number: BSP295E6327T
  • Manufacturer: Infineon
  • Description: MOSFET N-CH 60V 1.8A SOT223-4
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • BSP295E6327T Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: BSP295E6327T
  • Mfr: Infineon Technologies
  • Description: MOSFET N-CH 60V 1.8A SOT223-4
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: SIPMOS®
  • PartStatus: Obsolete
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 60 V
  • Current-ContinuousDrain(Id)@25°C: 1.8A (Ta)
  • DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
  • RdsOn(Max)@IdVgs: 300mOhm @ 1.8A, 10V
  • Vgs(th)(Max)@Id: 1.8V @ 400µA
  • GateCharge(Qg)(Max)@Vgs: 17 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 368 pF @ 25 V
  • FETFeature: -
  • PowerDissipation(Max): 1.8W (Ta)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PG-SOT223-4
  • BSP295E6327T | Infineon | NHE Electronics
  • BSP295E6327T were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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