Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
BSZ017NE2LS5IATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 25V 27A/40A TSDSON
BSZ017NE2LS5IATMA1 Images
Product Attributes：
Part Number: BSZ017NE2LS5IATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 25V 27A/40A TSDSON
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BSZ017NE2LS5IATMA1 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Infineon, you may also be interested in the following:
BUFFER/INVERTER PERIPHL DRIVER
IC REG LINEAR 5V 500MA TO263-7-1
MOSFET N-CH 30V 20A TO220-3
BIPOLAR DIGITAL TRANSISTOR
IC SRAM 256KBIT PAR 28TSOP I
IC GATE DRVR HALF-BRIDGE 14DIP
Product Specifications：
MfrPart.: BSZ017NE2LS5IATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 25V 27A/40A TSDSONProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 25 VCurrent-ContinuousDrain(Id)@25°C: 27A (Ta), 40A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 1.7mOhm @ 20A, 10VVgs(th)(Max)@Id: 2V @ 250µAGateCharge(Qg)(Max)@Vgs: 30 nC @ 10 VVgs(Max): ±16VInputCapacitance(Ciss)(Max)@Vds: 2000 pF @ 12 VFETFeature: -PowerDissipation(Max): 2.1W (Ta), 50W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TSDSON-8-FLBSZ017NE2LS5IATMA1 | Infineon | NHE Electronics
BSZ017NE2LS5IATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
