Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
BSZ018NE2LSATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 25V 23A/40A TSDSON
Product Attributes：
Part Number: BSZ018NE2LSATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 25V 23A/40A TSDSON
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BSZ018NE2LSATMA1 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Infineon, you may also be interested in the following:
IC NVSRAM 4MBIT PARALLEL 48FBGA
MOSFET N-CH 550V 12A TO263-3
IC MCU 8BIT 16KB MROM 80PQFP
IC SRAM 16MBIT PAR 54TSOP II
OTP ROM, 64KX8, 70NS PQCC32
IC REG LINEAR FIXED POS LDO REG
Product Specifications：
MfrPart.: BSZ018NE2LSATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 25V 23A/40A TSDSONProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 25 VCurrent-ContinuousDrain(Id)@25°C: 23A (Ta), 40A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 1.8mOhm @ 30A, 10VVgs(th)(Max)@Id: 2V @ 250µAGateCharge(Qg)(Max)@Vgs: 39 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2800 pF @ 12 VFETFeature: -PowerDissipation(Max): 2.1W (Ta), 69W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TSDSON-8-FLBSZ018NE2LSATMA1 | Infineon | NHE Electronics
BSZ018NE2LSATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
