Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
BSZ067N06LS3GATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 14A/20A 8TSDSON
BSZ067N06LS3GATMA1 Images
Product Attributes:
Part Number: BSZ067N06LS3GATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 60V 14A/20A 8TSDSON
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BSZ067N06LS3GATMA1 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Infineon, you may also be interested in the following:
IC GATE DRVR LOW-SIDE 8SOIC
DIODE SCHOTTKY 40V 120MA TSLP-2
MOSFET N-CH 100V 120A TO220AB
IGBT MOD 1700V 840A 3150W
Product Specifications:
MfrPart.: BSZ067N06LS3GATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 60V 14A/20A 8TSDSONProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 14A (Ta), 20A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 6.7mOhm @ 20A, 10VVgs(th)(Max)@Id: 2.2V @ 35µAGateCharge(Qg)(Max)@Vgs: 67 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 5100 pF @ 30 VFETFeature: -PowerDissipation(Max): 2.1W (Ta), 69W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TSDSON-8BSZ067N06LS3GATMA1 | Infineon | NHE Electronics
BSZ067N06LS3GATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.