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BSZ086P03NS3EGATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 13.5A/40A TSDSON
BSZ086P03NS3EGATMA1 Images
BSZ086P03NS3EGATMA1 Images
Product Attributes:
  • Part Number: BSZ086P03NS3EGATMA1
  • Manufacturer: Infineon
  • Description: MOSFET P-CH 30V 13.5A/40A TSDSON
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • BSZ086P03NS3EGATMA1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: BSZ086P03NS3EGATMA1
  • Mfr: Infineon Technologies
  • Description: MOSFET P-CH 30V 13.5A/40A TSDSON
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: OptiMOS™
  • PartStatus: Active
  • FETType: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 30 V
  • Current-ContinuousDrain(Id)@25°C: 13.5A (Ta), 40A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10V
  • RdsOn(Max)@IdVgs: 8.6mOhm @ 20A, 10V
  • Vgs(th)(Max)@Id: 3.1V @ 105µA
  • GateCharge(Qg)(Max)@Vgs: 57.5 nC @ 10 V
  • Vgs(Max): ±25V
  • InputCapacitance(Ciss)(Max)@Vds: 4785 pF @ 15 V
  • FETFeature: -
  • PowerDissipation(Max): 2.1W (Ta), 69W (Tc)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PG-TSDSON-8
  • BSZ086P03NS3EGATMA1 | Infineon | NHE Electronics
  • BSZ086P03NS3EGATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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