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BSZ12DN20NS3GATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 200V 11.3A 8TSDSON
BSZ12DN20NS3GATMA1 Images
Product Attributes：
Part Number: BSZ12DN20NS3GATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 200V 11.3A 8TSDSON
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BSZ12DN20NS3GATMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: BSZ12DN20NS3GATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 200V 11.3A 8TSDSONProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 200 VCurrent-ContinuousDrain(Id)@25°C: 11.3A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 125mOhm @ 5.7A, 10VVgs(th)(Max)@Id: 4V @ 25µAGateCharge(Qg)(Max)@Vgs: 8.7 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 680 pF @ 100 VFETFeature: -PowerDissipation(Max): 50W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TSDSON-8BSZ12DN20NS3GATMA1 | Infineon | NHE Electronics
BSZ12DN20NS3GATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
