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DF200R12W1H3B27BOMA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MOD 1200V 30A 375W
DF200R12W1H3B27BOMA1 Images
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Product Specifications:
MfrPart.: DF200R12W1H3B27BOMA1Mfr: Infineon TechnologiesDescription: IGBT MOD 1200V 30A 375WProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: BulkSeries: -PartStatus: ActiveIGBTType: -Configuration: 2 IndependentVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 30 APower-Max: 375 WVce(on)(Max)@VgeIc: 1.3V @ 15V, 30ACurrent-CollectorCutoff(Max): 1 mAInputCapacitance(Cies)@Vce: 2 nF @ 25 VInput: StandardNTCThermistor: YesOperatingTemperature: -40°C ~ 150°CMountingType: Chassis MountPackage/Case: ModuleDF200R12W1H3B27BOMA1 | Infineon | NHE Electronics
DF200R12W1H3B27BOMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.