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F1235R12KT4GBOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MOD 1200V 35A 210W
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Product Specifications:
MfrPart.: F1235R12KT4GBOSA1Mfr: Infineon TechnologiesDescription: IGBT MOD 1200V 35A 210WProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: BulkSeries: -PartStatus: ObsoleteIGBTType: Trench Field StopConfiguration: SingleVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 35 APower-Max: 210 WVce(on)(Max)@VgeIc: 2.15V @ 15V, 35ACurrent-CollectorCutoff(Max): 1 mAInputCapacitance(Cies)@Vce: 2 nF @ 25 VInput: StandardNTCThermistor: NoOperatingTemperature: -40°C ~ 150°C (TJ)MountingType: Chassis MountPackage/Case: ModuleF1235R12KT4GBOSA1 | Infineon | NHE Electronics
F1235R12KT4GBOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.