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F4100R12KS4BOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MOD 1200V 130A 660W
Product Attributes:
Part Number: F4100R12KS4BOSA1
Manufacturer: Infineon
Description: IGBT MOD 1200V 130A 660W
Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules
F4100R12KS4BOSA1 Datasheet (PDF)
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Product Specifications:
MfrPart.: F4100R12KS4BOSA1Mfr: Infineon TechnologiesDescription: IGBT MOD 1200V 130A 660WProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: BulkSeries: -PartStatus: ActiveIGBTType: -Configuration: Three Phase InverterVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 130 APower-Max: 660 WVce(on)(Max)@VgeIc: 3.75V @ 15V, 100ACurrent-CollectorCutoff(Max): 5 mAInputCapacitance(Cies)@Vce: 6.8 nF @ 25 VInput: StandardNTCThermistor: YesOperatingTemperature: -40°C ~ 125°CMountingType: Chassis MountPackage/Case: ModuleF4100R12KS4BOSA1 | Infineon | NHE Electronics
F4100R12KS4BOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.