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F415MR12W2M1B76BOMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, LOW POWER EASY AG-EASY2B-2
F415MR12W2M1B76BOMA1 Images
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Product Specifications:
MfrPart.: F415MR12W2M1B76BOMA1Mfr: Infineon TechnologiesDescription: LOW POWER EASY AG-EASY2B-2Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - ArraysPackage: TraySeries: EasyPACK™ CoolSiC™PartStatus: ActiveFETType: 4 N-Channel (Half Bridge)FETFeature: Silicon Carbide (SiC)DraintoSourceVoltage(Vdss): 1200V (1.2kV)Current-ContinuousDrain(Id)@25°C: 75A (Tj)RdsOn(Max)@IdVgs: 15mOhm @ 75A, 15VVgs(th)(Max)@Id: 5.55V @ 30mAGateCharge(Qg)(Max)@Vgs: 186nC @ 15VInputCapacitance(Ciss)(Max)@Vds: 800VPower-Max: -OperatingTemperature: -40°C ~ 150°C (TJ)MountingType: Chassis MountPackage/Case: ModuleF415MR12W2M1B76BOMA1 | Infineon | NHE Electronics
F415MR12W2M1B76BOMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.