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F423MR12W1M1B76BPSA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET MODULE
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Product Specifications:
MfrPart.: F423MR12W1M1B76BPSA1Mfr: Infineon TechnologiesDescription: MOSFET MODULEProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - ArraysPackage: TraySeries: EasyPACK™ CoolSiC™PartStatus: ActiveFETType: 4 N-Channel (Half Bridge)FETFeature: Silicon Carbide (SiC)DraintoSourceVoltage(Vdss): 1200V (1.2kV)Current-ContinuousDrain(Id)@25°C: 45A (Tj)RdsOn(Max)@IdVgs: 22.5mOhm @ 50A, 15VVgs(th)(Max)@Id: 5.55V @ 20mAGateCharge(Qg)(Max)@Vgs: 124nC @ 15VInputCapacitance(Ciss)(Max)@Vds: 800VPower-Max: -OperatingTemperature: -40°C ~ 150°C (TJ)MountingType: Chassis MountPackage/Case: ModuleF423MR12W1M1B76BPSA1 | Infineon | NHE Electronics
F423MR12W1M1B76BPSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.