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F475R07W2H3B51BOMA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT, 75A, 650V, N-CHANNEL
F475R07W2H3B51BOMA1 Images
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Product Specifications:
MfrPart.: F475R07W2H3B51BOMA1Mfr: Infineon TechnologiesDescription: IGBT, 75A, 650V, N-CHANNELProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: TraySeries: -PartStatus: ObsoleteIGBTType: -Configuration: Full Bridge InverterVoltage-CollectorEmitterBreakdown(Max): 650 VCurrent-Collector(Ic)(Max): 75 APower-Max: 520 WVce(on)(Max)@VgeIc: 1.55V @ 15V, 37.5ACurrent-CollectorCutoff(Max): 1 mAInputCapacitance(Cies)@Vce: 4.7 nF @ 25 VInput: StandardNTCThermistor: YesOperatingTemperature: -40°C ~ 150°C (TJ)MountingType: Chassis MountPackage/Case: ModuleF475R07W2H3B51BOMA1 | Infineon | NHE Electronics
F475R07W2H3B51BOMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.