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FD1000R17IE4DB2BOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MODULE
FD1000R17IE4DB2BOSA1 Images
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Product Specifications:
MfrPart.: FD1000R17IE4DB2BOSA1Mfr: Infineon TechnologiesDescription: IGBT MODULEProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: BulkSeries: PrimePACK™3PartStatus: ActiveIGBTType: -Configuration: SingleVoltage-CollectorEmitterBreakdown(Max): 1.7 VCurrent-Collector(Ic)(Max): 1.39 APower-Max: 6.25 WVce(on)(Max)@VgeIc: 2.45V @ 15V, 1000ACurrent-CollectorCutoff(Max): 5 mAInputCapacitance(Cies)@Vce: 81 nF @ 25 VInput: StandardNTCThermistor: YesOperatingTemperature: -40°C ~ 150°CMountingType: Chassis MountPackage/Case: ModuleFD1000R17IE4DB2BOSA1 | Infineon | NHE Electronics
FD1000R17IE4DB2BOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.