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FD200R12PT4B6BOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MOD 1200V 300A 1100W
FD200R12PT4B6BOSA1 Images
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Product Specifications:
MfrPart.: FD200R12PT4B6BOSA1Mfr: Infineon TechnologiesDescription: IGBT MOD 1200V 300A 1100WProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: BulkSeries: -PartStatus: ActiveIGBTType: Trench Field StopConfiguration: Three Phase InverterVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 300 APower-Max: 1100 WVce(on)(Max)@VgeIc: 2.1V @ 15V, 200ACurrent-CollectorCutoff(Max): 15 µAInputCapacitance(Cies)@Vce: 12.5 nF @ 25 VInput: StandardNTCThermistor: YesOperatingTemperature: -40°C ~ 150°CMountingType: Chassis MountPackage/Case: ModuleFD200R12PT4B6BOSA1 | Infineon | NHE Electronics
FD200R12PT4B6BOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.