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FD900R12IP4DVBOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, FD900R12 - INSULATED GATE BIPOLA
FD900R12IP4DVBOSA1 Images
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Product Specifications:
MfrPart.: FD900R12IP4DVBOSA1Mfr: Infineon TechnologiesDescription: FD900R12 - INSULATED GATE BIPOLAProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: BulkSeries: -PartStatus: ActiveIGBTType: Trench Field StopConfiguration: SingleVoltage-CollectorEmitterBreakdown(Max): 1.2 VCurrent-Collector(Ic)(Max): 900 APower-Max: 5.1 WVce(on)(Max)@VgeIc: 2.05V @ 15V, 900ACurrent-CollectorCutoff(Max): 5 mAInputCapacitance(Cies)@Vce: 54 nF @ 25 VInput: StandardNTCThermistor: YesOperatingTemperature: -40°C ~ 150°CMountingType: Chassis MountPackage/Case: ModuleFD900R12IP4DVBOSA1 | Infineon | NHE Electronics
FD900R12IP4DVBOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.